The storage materials and key technologies of the phase change random access memory pass the acceptance

On December 20, the national "Eleventh Five-Year" 863 plan in the field of new materials "phase-change random access memory storage materials and key technologies" key subject passed the acceptance of the Ministry of Science and Technology. Shi Dongmei, Director of the Materials Department of the High-Tech Research Center of the Ministry of Science and Technology, and Professor Pan Feng from Tsinghua University, Professor Liu Zhiguo from Nanjing University, Professor Sun Zhuo from East China Normal University, Researcher Lu Wei from the Shanghai Institute of Technical Physics, Chinese Academy of Sciences, and Professor Yang Jinghai from Jilin Normal University attended the acceptance experts meeting. A total of more than 20 people, including Song Zhitang, the research team leader and assistant director of the Shanghai Institute of Microsystems, and the main members of the research group, attended the meeting.

The meeting was chaired by Pan Feng, the leader of the acceptance expert group. At the meeting, researcher Song Zhitang, the project leader, reported the completion of the project to the participating leaders and experts. The acceptance expert group gave a high evaluation of the completion of the project on the basis of carefully reviewing relevant technical documents and materials, comprehensively listening to the report of the person in charge of the project and inquiring, and observing the audio demonstration system of the 8Mb phase change memory test chip independently developed by the project team. . It is believed that the research group has carried out a large amount of research work around the expected goals specified in the project mandate, and obtained a large number of important scientific research results, including screening out new SiSbTe phase change materials with independent intellectual property rights and entering engineering verification, establishing an 8-inch phase The special platform for variable memory realizes seamless connection with the standard 180-130nm CMOS process. On this platform, a full-featured 8Mb PCRAM chip is developed, and the chip yield rate reaches more than 99%.

After careful discussion, the acceptance expert group agreed that the subject successfully completed the task objectives and assessment indicators specified in the contract mission statement and agreed that the subject passed the acceptance. Before the acceptance meeting began, the expert leaders who participated in the acceptance meeting also inspected the 12-inch phase-change memory technology platform on site.

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